欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: APT50GN60B
元件分類: IGBT 晶體管
英文描述: 107 A, 600 V, N-CHANNEL IGBT, TO-247AD
封裝: TO-247, 3 PIN
文件頁數: 1/6頁
文件大小: 292K
代理商: APT50GN60B
050-7612
Rev
B
7-2005
APT50GN60B(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 4mA)
Gate Threshold Voltage (V
CE = VGE, I C = 800A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT50GN60B(G)
600
±30
107
64
150
150A @ 600V
366
-55 to 175
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 8 @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 175°C
Switching Safe Operating Area @ T
J = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefcient. Low gate charge simplies gate drive
design and minimizes losses.
600V Field Stop
Trench Gate: Low VCE(on)
Easy Paralleling
6s Short Circuit Capability
175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
600
5.0
5.8
6.5
1.05
1.45
1.85
1.7
25
TBD
600
N/A
600V
APT50GN60B
APT50GN60BG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
G
C
E
TO-2
47
G
C
E
相關PDF資料
PDF描述
APT50GN60B 107 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GN60BG 107 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GP60JDF2 100 A, 600 V, N-CHANNEL IGBT
APT50GP90JDF2 80 A, 900 V, N-CHANNEL IGBT
APT50GT60BG 110 A, 600 V, N-CHANNEL IGBT, TO-247
相關代理商/技術參數
參數描述
APT50GN60BDQ2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT
APT50GN60BDQ2G 功能描述:IGBT 600V 107A 366W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿(最大):1200V Vge, Ic時的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
APT50GN60BG 功能描述:IGBT 600V 107A 366W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿(最大):1200V Vge, Ic時的最大Vce(開):3V @ 15V,100A 電流 - 集電極 (Ic)(最大):200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件
APT50GN60S 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT50GN60SDQ2 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
主站蜘蛛池模板: 遂溪县| 体育| 冀州市| 和平区| 南丹县| 邵阳市| 云梦县| 江津市| 都匀市| 衡阳市| 兴化市| 乐业县| 铁岭市| 广西| 周口市| 望奎县| 比如县| 潢川县| 晴隆县| 扬中市| 上蔡县| 岳池县| 工布江达县| 大埔区| 库伦旗| 安远县| 连江县| 洞口县| 西峡县| 封丘县| 万州区| 贺州市| 台山市| 嫩江县| 育儿| 玛沁县| 资源县| 漠河县| 香港 | 兴化市| 鹿邑县|