欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): APT50GT120LRDQ2G
元件分類(lèi): IGBT 晶體管
英文描述: 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA
封裝: TO-264, 3 PIN
文件頁(yè)數(shù): 1/9頁(yè)
文件大小: 434K
代理商: APT50GT120LRDQ2G
052-6271
Rev
A
8-2005
APT50GT120LRDQ2(G)
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT50GT120LRDQ2(G)
1200
±30
106
50
150
150A @ 1200V
694
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 8 @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1 @ T
C = 150°C
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1200V
APT50GT120LRDQ2
APT50GT120LRDQ2G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast
switching speed.
Low Forward Voltage Drop
High Freq. Switching to 50KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Intergrated Gate Resistor: Low EMI, High Reliability
Thunderbolt IGBT
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 3mA)
Gate Threshold Voltage (V
CE = VGE, I C = 2mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 1200V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
A
nA
MIN
TYP
MAX
1200
4.5
5.5
6.5
2.7
3.2
3.7
4.0
300
TBD
300
5
C
E
G
TO-264
相關(guān)PDF資料
PDF描述
APT50GT60BR 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GT60SR 110 A, 600 V, N-CHANNEL IGBT
APT50M38JFLL 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M38JFLL 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M50JFLL 71 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50GT120LRG 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt IGBT
APT50GT60BR 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Thunderbolt IGBT
APT50GT60BRDL 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT50GT60BRDLG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube
APT50GT60BRDQ1 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Thunderbolt IGBT
主站蜘蛛池模板: 澳门| 永德县| 江口县| 靖西县| 游戏| 酉阳| 威远县| 全椒县| 肃宁县| 凤山市| 中牟县| 阜阳市| 黄平县| 旌德县| 芒康县| 苏尼特左旗| 广州市| 金秀| 拜泉县| 桦川县| 临高县| 丰宁| 石景山区| 桐乡市| 舞阳县| 临澧县| 芒康县| 尼木县| 泾川县| 南木林县| 罗甸县| 资中县| 苍山县| 会同县| 黄山市| 江达县| 无棣县| 尉犁县| 咸丰县| 溧阳市| 龙州县|