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參數(shù)資料
型號: APT50GT60B
元件分類: IGBT 晶體管
英文描述: 110 A, 600 V, N-CHANNEL IGBT, TO-247
封裝: TO-247, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 409K
代理商: APT50GT60B
052-6273
Rev
B
11-2005
APT50GT60B_SR(G)
TYPICAL PERFORMANCE CURVES
The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast
switching speed.
Low Forward Voltage Drop
High Freq. Switching to 100KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Thunderbolt IGBT
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE = 0V, I C = 2mA)
Gate Threshold Voltage (V
CE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (V
GE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (V
GE = ±20V)
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
Units
Volts
A
nA
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J,TSTG
T
L
APT50GT60B_SR(G)
600
±30
110
52
150
150A @ 600V
446
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current 7 @ T
C = 25°C
Continuous Collector Current @ T
C = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ T
J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
MIN
TYP
MAX
600
3
4
5
1.7
2.0
2.5
2.2
25
TBD
120
G
C
E
TO-2
47
G
C
E
D3PAK
G
C
E
(S)
(B)
600V
APT50GT60B
APT50GT60S
APT50GT60BG* APT50GT60SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
相關(guān)PDF資料
PDF描述
APT50GT60S 110 A, 600 V, N-CHANNEL IGBT
APT50GT60SG 110 A, 600 V, N-CHANNEL IGBT
APT50GT60BRDL 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GT60BR 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
APT50GT60BRG 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50GT60BR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT
APT50GT60BRDL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT
APT50GT60BRDLG 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube
APT50GT60BRDQ1 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT
APT50GT60BRDQ1G 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT
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