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參數資料
| 型號： | APT50M60JVR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 168K |
| 代理商： | APT50M60JVR |
DYNAMIC CHARACTERISTICS
APT50M60JVR
050-7250
Rev
A
5-2004
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.22
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 250V
I
D = 63A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 250V
I
D = 63A @ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 333V, VGS = 15V
I
D = 63A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 333V, VGS = 15V
I
D = 63A, RG = 5
MIN
TYP
MAX
10600
1800
795
560
70
285
20
25
80
10
1235
2820
1700
2900
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -63A)
Reverse Recovery Time (I
S = -63A, dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -63A, dlS/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
63
252
1.3
680
17
8
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.61mH, RG = 25, Peak IL = 63A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID63A
di/dt ≤ 700A/s V
R ≤ 500V
TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
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