- 您現在的位置：買賣IC網 > PDF目錄36719 > APT50M80B2LC 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | APT50M80B2LC |
| 元件分類： | JFETs |
| 英文描述： | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 92K |
| 代理商： | APT50M80B2LC |
ADVANCED
TECHNICAL
INFORMATION
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
500
58
0.080
25
250
±100
35
APT50M80
500
58
232
±30
±40
625
5.0
-55 to 150
300
58
50
3000
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
On State Drain Current 2
(V
DS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (V
GS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
T-MAX
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
TO-264
B2LC
LLC
050-5933
Rev
-
8-2000
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
iss and Crss.
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
Identical Specifications: T-MAX or TO-264 Package
Lower Gate Charge & Capacitance
Easier To Drive
100% Avalanche Tested
Faster switching
POWER MOS VITM
APT50M80B2LC
APT50M80LLC
500V 58A 0.080
相關PDF資料 |
PDF描述 |
|---|---|
| APT50M85JVFR | 50 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85JVFR | 50 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85JVFR | 50 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85JVR | 50 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85JVR | 50 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT50M80B2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V |
| APT50M80B2VFR_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V |
| APT50M80B2VFRG | 功能描述:MOSFET N-CH 500V 58A T-MAX RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT50M80B2VR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 58A 3-Pin(3+Tab) T-MAX |
| APT50M80B2VR_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V |
發布緊急采購，3分鐘左右您將得到回復。