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參數(shù)資料
| 型號(hào)： | APT50M85LVFRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 141K |
| 代理商： | APT50M85LVFRG |
050-5914
Rev
A
5-2004
APT50M85B2VFR
APT50M85LVFR
500V 56A
0.085
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 28A)
Zero Gate Voltage Drain Current (V
DS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
500
0.085
250
1000
±100
24
APT50M85B2VFR_LVFR
500
56
224
±30
±40
625
5.00
-55 to 150
300
56
50
3000
G
D
S
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
T-MAX or TO-264 Package
Avalanche Energy Rated
Faster Switching
Lower Leakage
POWER MOS V FREDFET
FAST RECOVERY BODY DIODE
T-MAX
TO-264
B2VFR
LVFR
相關(guān)PDF資料 |
PDF描述 |
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| APT50M85B2VFR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85LVR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M85B2VR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85B2VRG | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M85LVR | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50M85LVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M85LVRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT50MC120JCU2 | 制造商:Microsemi Corporation 功能描述:1200 V 34 mOhm 179 nC Boost chopper SiC MOSFET 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE DIODE |
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