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參數資料
| 型號： | APT50N60JCU2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 600 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 150K |
| 代理商： | APT50N60JCU2 |
APT50N60JCU2
APT
50N60JCU2
–
Rev
2
Apr
il,
2008
www.microsemi.com
1- 6
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
52
ID
Continuous Drain Current
Tc = 80°C
38
IDM
Pulsed Drain current
130
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
45
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
290
W
IAR
Avalanche current (repetitive and non repetitive)
15
A
EAR
Repetitive Avalanche Energy
3
EAS
Single Pulse Avalanche Energy
1900
mJ
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
ISOTOP
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP
Boost chopper
Super Junction
MOSFET Power Module
K
D
G
S
VDSS = 600V
RDSon = 45mΩ max @ Tj = 25°C
ID = 52A @ Tc = 25°C
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相關代理商/技術參數 |
參數描述 |
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| APT51F50J | 功能描述:MOSFET N-CH 500V 51A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APT51M50J | 功能描述:MOSFET N-CH 500V 51A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APT51M50J_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel MOSFET |
| APT53F80J | 功能描述:MOSFET N-CH 800V 57A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 8™ 標準包裝:10 系列:* |
| APT53N60BC6 | 功能描述:MOSFET N-CH 600V 53A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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