- 您現在的位置：買賣IC網 > PDF目錄36719 > APT54H50B2 (MICROSEMI POWER PRODUCTS GROUP) 54 A, 500 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB PDF資料下載
參數資料
| 型號： | APT54H50B2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 54 A, 500 V, 0.107 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 262K |
| 代理商： | APT54H50B2 |
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
inlbf
Nm
Ratings
54
34
175
±30
1200
28
Min
Typ
Max
780
0.16
0.11
-55
150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J,TSTG
T
L
W
T
Torque
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
UPS
Welding
Solar inverters
Telecom rectiers
FEATURES
Fast switching with low EMI
Very Low trr for maximum reliability
Ultra low Crss for improved noise immunity
Low gate charge
Avalanche energy rated
RoHS compliant
T-Max
TO-264
APT54H50B2
APT54H50L
500V, 54A, 0.107 Max, trr ≤230ns
APT54H50B2
APT54H50L
N-Channel Ultrafast Recovery FREDFET
Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
Microsemi Website - http://www.microsemi.com
050-8120
Rev
A
5-2007
相關PDF資料 |
PDF描述 |
|---|---|
| APT5510B2FLL | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5510B2FLLG | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5510LFLL | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT5510LFLL | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT5510LFLLG | 49 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT55-101DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 17.5A I(D) | CHIP |
| APT5510B2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5510JFLL | 功能描述:MOSFET N-CH 550V 44A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT5510LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5513B2FLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
發布緊急采購，3分鐘左右您將得到回復。