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參數(shù)資料
| 型號(hào)： | APT5510JFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 44 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 94K |
| 代理商： | APT5510JFLL |
050-7191
Rev
A
3-2003
APT5510JFLL
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
550
0
10
20
30
40
50
0
40
80
120
160
200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
182
100
10
1
16
12
8
4
0
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
0
20406080
0
20
40
60
80
0
10
20
30
40
50
60
70
80
0
5
10
152025
30
35 404550
100
80
60
40
20
0
2000
1500
1000
500
0
Crss
Ciss
Coss
TC=+25°C
TJ=+150°C
SINGLE PULSE
10mS
1mS
100S
TJ=+150°C
TJ =+25°C
VDS=275V
VDS=110V
VDS=440V
I
D
= 49A
V
DD
= 367V
R
G
= 5
T
J
= 125°C
L = 100H
tr
tf
td(on)
td(off)
V
DD
= 367V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
V
DD
= 367V
I
D
= 49A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
Eon
Eoff
V
DD
= 367V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
OPERATIONHERE
LIMITEDBYRDS(ON)
20,000
10,000
1,000
100
10
200
100
10
1
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
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