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參數資料
型號: APT6013B2FLLG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TMAX-3
文件頁數: 1/5頁
文件大?。?/td> 146K
代理商: APT6013B2FLLG
050-7071
Rev
B
9-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
T-MAX
G
D
S
TO-264
B2FLL
LFLL
APT6013B2FLL
APT6013LFLL
600V 43A 0.130
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular T-MAX or TO-264 Package
FAST RECOVERY BODY DIODE
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7 R FREDFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 21.5A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
600
0.130
250
1000
±100
35
APT6013B2LL_LLL
600
43
172
±30
±40
565
4.52
-55 to 150
300
43
50
2500
相關PDF資料
PDF描述
APT6013B2FLL 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6013LFLLG 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT6013B2FLL 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6013LFLL 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT6013LLLG 43 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
相關代理商/技術參數
參數描述
APT6013B2LL 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6013B2LL_04 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT6013B2LLG 功能描述:MOSFET N-CH 600V 43A T-MAX RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT6013JFLL 功能描述:MOSFET N-CH 600V 39A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:*
APT6013JFLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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