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參數資料
| 型號： | APT60DQ60S |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| 中文描述： | 超快軟恢復整流二極管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 139K |
| 代理商： | APT60DQ60S |
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PRODUCT BENEFITS
Low Losses
Low Noise Switching
Cooler Operation
Higher Reliability Systems
Increased System Power
Density
PRODUCT FEATURES
Ultrafast Recovery Times
Soft Recovery Characteristics
Popular TO-247 Package or
Surface Mount D
3
PAK Package
Low Forward Voltage
Low Leakage Current
Avalanche Energy Rated
PRODUCT APPLICATIONS
Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
Snubber Diode
PFC
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
600V 60A
APT60DQ60B
APT60DQ60BG* APT60DQ60SG*
APT60DQ60S
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
RM
C
T
UNIT
Volts
μ
A
pF
MIN
TYP
MAX
2.0
2.4
2.44
1.7
25
500
75
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 60A
I
F
= 120A
I
F
= 60A, T
J
= 125°C
V
R
= 600V
V
R
= 600V, T
J
= 125°C
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 110°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
E
AVL
T
J
,T
STG
T
L
UNIT
Volts
Amps
mJ
°C
APT60DQ60B_S(G)
600
60
94
600
20
-55 to 175
300
1 - Cathode
2 - Anode
Back of Case -Cathode
1
2
TO-247
1
2
D
3
PAK
1
2
(S)
(B)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT60DQ60SG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT60DS04HJ | 制造商:Microsemi Corporation 功能描述:MOD DIODE 400V SOT-227 |
| APT60DS10HJ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP Schottky Diode Full Bridge Power Module |
| APT60DS20HJ | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOTOP Schottky Diode Full Bridge Power Module |
| APT60GA60JD60 | 功能描述:IGBT 600V 112A 356W SOT-227 RoHS:是 類別:半導體模塊 >> IGBT 系列:POWER MOS 8™ 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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