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參數(shù)資料
| 型號： | APT60GF60JU3 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 516K |
| 代理商： | APT60GF60JU3 |
APT60GF60JU3
A
P
T
60G
F
60J
U
3–
R
ev
1
J
une
,2006
www.microsemi.com
2 - 8
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 0.5mA
600
V
Tj = 25°C
80
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
2000
A
Tj = 25°C
2.0
2.5
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 60A
Tj = 125°C
2.8
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 500A
3
4
5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3125 3590
Coes
Output Capacitance
310
450
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
180
310
pF
Qg
Total gate Charge
257
410
Qge
Gate – Emitter Charge
19
30
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 300V
IC = 60A
120
180
nC
Td(on)
Turn-on Delay Time
20
40
Tr
Rise Time
95
190
Td(off)
Turn-off Delay Time
315
470
Tf
Fall Time
Resistive Switching (25°C)
VGE = 15V
VBus = 300V
IC = 60A
RG = 5
245
490
ns
Td(on)
Turn-on Delay Time
26
50
Tr
Rise Time
63
125
Td(off)
Turn-off Delay Time
395
590
Tf
Fall Time
68
140
ns
Ets
Total switching Losses
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 60A
RG = 5
3.4
7
mJ
Td(on)
Turn-on Delay Time
25
50
Tr
Rise Time
59
120
Td(off)
Turn-off Delay Time
430
650
Tf
Fall Time
65
130
ns
Eon
Turn-on Switching Energy
1.6
3.2
Eoff
Turn-off Switching Energy
2.4
4.8
Ets
Total switching Losses
Inductive Switching (150°C)
VGE = 15V
VBus = 400V
IC = 60A
RG = 5
4.0
8.0
mJ
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