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參數資料
| 型號： | APT60GT60BR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 253K |
| 代理商： | APT60GT60BR |
052-6223
Rev
D
6
-200
8
APT60GT60BR_SR
G
C
E
APT60GT60BR
APT60GT60SR
600V
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT offers superior
ruggedness and ultrafast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 150KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
Thunderbolt IGBT
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
MIN
TYP
MAX
600
345
1.6
2.2
2.5
2.8
80
2000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
Gate Threshold Voltage (VCE = VGE, IC = 500A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
EAS
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Gate Emitter Voltage
Continuous Collector Current @ TC = 25°C 4
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1 @ TC = 25°C
RBSOA Clamped Inductive Load Current RG = 11 TC = 25°C
Single Pule Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT60GT60BR_SR
600
±20
100
60
360
65
500
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
TO
-24
7
G
C
E
D3PAK
G
C
E
(B)
(S)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT60GT60BRG | 功能描述:IGBT 600V 100A 500W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT60GT60JR | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:Thunderbolt IGBT® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT60GT60JRD | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT60GT60JRDQ3 | 功能描述:IGBT 600V 105A 379W SOT227 RoHS:是 類別:半導體模塊 >> IGBT 系列:Thunderbolt IGBT® 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APT60GT60SRG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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