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參數(shù)資料
| 型號： | APT60N60BCS |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Super Junction MOSFET |
| 中文描述： | 超級結(jié)MOSFET的 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 411K |
| 代理商： | APT60N60BCS |
0
FINAL DATA SHEET WITH MOS 7 FORMAT
C
Power Semiconductors
O L
MOS
TO247
D
3
PAK
G
D
S
(S)
(B)
600V 60A 0.045
APT60N60BCS
APT60N60BCSG*
APT60N60SCS
APT60N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultra Low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Q
g
Avalanche Energy Rated
Extreme dv/dt Rated
Popular TO-247 or Surface Mount D
3
Package
Super Junction MOSFET
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified
.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250μA)
Drain-Source On-State Resistance
4
(V
GS
= 10V, I
D
= 44A)
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 600V, V
GS
= 0V, T
C
= 150°C)
Gate-Source Leakage Current (V
GS
= ±20V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 3mA)
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J
,T
STG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Continuous Drain Current @ T
C
= 100°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (V
DS
= 480V)
Avalanche Current
2
Repetitive Avalanche Energy
2
Single Pulse Avalanche Energy
3
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
μA
nA
Volts
APT60N60B_SCS(G)
600
60
38
230
±30
431
3.45
-55 to 150
260
50
11
3
1950
MIN
TYP
MAX
600
0.045
25
250
±100
2.1
3
3.9
APT Website - http://www.advancedpower.com
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
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| APT60N60BCSG | Super Junction MOSFET |
| APT60N60SCS | Super Junction MOSFET |
| APT60N60SCSG | Super Junction MOSFET |
| APT65GP60B2 | POWER MOS 7 IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60N60BCSG | 功能描述:MOSFET N-CH 600V 60A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT60N60SCS | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT60N60SCSG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 60A 3-Pin(2+Tab) D3PAK 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N60SCSG/TR | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N90JC3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
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