- 您現在的位置：買賣IC網 > PDF目錄366573 > APT65GP60J (Advanced Power Technology Ltd.) POWER MOS 7 IGBT PDF資料下載
參數資料
| 型號： | APT65GP60J |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 109K |
| 代理商： | APT65GP60J |
0
APT65GP60J
600V
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
Low Gate Charge
Ultrafast Tail Current shutoff
100 kHz operation @ 400V, 33A
50 kHz operation @ 400V, 47A
SSOA rated
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
APT65GP60J
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
Symbol
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
1000
5000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1000μA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 2.5mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 65A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 65A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
μA
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
600
±20
±30
130
60
250
250A@600V
431
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
@ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 25°C
Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
POWER MOS 7
IGBT
G
C
E
SOT-227
G
E
E
C
ISOTOP
"UL Recognized"
相關PDF資料 |
PDF描述 |
|---|---|
| APT65GP60L2DF2 | POWER MOS 7 IGBT |
| APT65GP60L2DQ2 | POWER MOS 7 IGBT |
| APT65GP60L2DQ2G | POWER MOS 7 IGBT |
| APT75DQ100B | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
| APT75DQ100BG | ULTRAFAST SOFT RECOVERY RECTIFIER DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT65GP60JDQ2 | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT65GP60L2DF2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT65GP60L2DQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT65GP60L2DQ2G | 功能描述:IGBT 600V 198A 833W TO264 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:POWER MOS 7® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT66F60B2 | 功能描述:MOSFET N-CH 600V 70A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
發布緊急采購，3分鐘左右您將得到回復。