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參數資料
| 型號： | APT75GN60B |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 155 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 4/6頁 |
| 文件大?。?/td> | 398K |
| 代理商： | APT75GN60B |
050-7619
Rev
A
9-2005
APT75GN60B(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 1.0
L = 100H
SWITCHING
ENERGY
LOSSES
(mJ)
E
ON2
,TURN
ON
ENERGY
LOSS
(mJ)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(mJ)
E
OFF
,TURN
OFF
ENERGY
LOSS
(mJ)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
VCE = 400V
VGE = +15V
RG = 1.0
R
G = 1.0, L = 100H, VCE = 400V
V
CE = 400V
T
J = 25°C, or =125°C
R
G = 1.0
L = 100 H
60
50
40
30
20
10
0
200
180
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
40
35
30
25
20
15
10
5
0
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
16
14
12
10
8
6
4
2
0
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C
T
J = 25°C
VCE = 400V
VGE = +15V
RG = 1.0
T
J = 125°C
T
J = 25°C
VCE = 400V
VGE = +15V
RG = 1.0
VCE = 400V
VGE = +15V
TJ = 125°C
5
25
45
65
85
105 125 145 165
5
25
45
65
85 105 125 145 165
5
25
45
65
85 105 125 145 165
5
25
45
65
85 105 125 145 165
5
25
45
65
85 105 125 145 165
5
25
45
65
85 105 125 145 165
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 1.0, L = 100H, VCE = 400V
E
on2,150A
E
off,150A
E
on2,75A
E
off,75A
E
on2,37.5A
E
off,37.5A
E
on2,150A
E
off,150A
E
on2,75A
E
off,75A
E
on2,37.5A
E
off,37.5A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT75GN60B2DQ3G | 功能描述:IGBT 600V 155A 536W TO264 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT75GN60BDQ2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT75GN60BG | 功能描述:IGBT 600V 155A 536W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT75GN60LDQ3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT75GN60LDQ3G | 功能描述:IGBT 600V 155A 536W TO264 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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