欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: APT77H60J
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 77 A, 600 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, ISOTOP, 4 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 273K
代理商: APT77H60J
SO
T-2
27
ISOTOP
file # E145592
"UL Recognized"
G
S
D
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Unit
A
V
mJ
A
Unit
W
°C/W
°C
V
oz
g
inlbf
Nm
Ratings
77
48
445
±30
3350
60
Min
Typ
Max
960
0.13
0.15
-55
150
2500
1.03
29.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
Terminals and Mounting Screws.
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J,TSTG
V
Isolation
W
T
Torque
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
UPS
Welding
Solar inverters
Telecom rectiers
FEATURES
Fast switching with low EMI
Very Low trr for maximum reliability
Ultra low Crss for improved noise immunity
Low gate charge
Avalanche energy rated
RoHS compliant
APT77H60J
600V, 77A, 0.065 Max, trr ≤300ns
N-Channel Ultrafast Recovery FREDFET
Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
Microsemi Website - http://www.microsemi.com
050-8152
Rev
A
6-2007
Single die FREDFET
相關PDF資料
PDF描述
APT8014L2FLL 52 A, 800 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT94N65B2C3 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
APTCV90TL12T3G 80 A, 1200 V, N-CHANNEL IGBT
APTGF180SK60TG 220 A, 600 V, N-CHANNEL IGBT
APTGF50DA120T1G 75 A, 1200 V, N-CHANNEL IGBT
相關代理商/技術參數(shù)
參數(shù)描述
APT77N60BC6 功能描述:MOSFET N-CH 600V 77A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT77N60JC3 功能描述:MOSFET N-CH 600V 77A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APT77N60JC3_09 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET
APT77N60SC6 制造商:Microsemi Corporation 功能描述:APT77N60SC6 - Bulk
APT7843 制造商:ANPEC 制造商全稱:Anpec Electronics Coropration 功能描述:Touch Screen Controller
主站蜘蛛池模板: 镇雄县| 抚顺市| 茶陵县| 漳州市| 博罗县| 灵川县| 宁津县| 夹江县| 天台县| 高碑店市| 孟村| 临桂县| 临朐县| 务川| 即墨市| 高阳县| 宁阳县| 九龙城区| 双牌县| 江城| 扎兰屯市| 临泽县| 宁城县| 长葛市| 梧州市| 潢川县| 金塔县| 越西县| 青神县| 平江县| 铜鼓县| 昌邑市| 汉川市| 诸城市| 东港市| 乃东县| 临朐县| 汉阴县| 南漳县| 太仓市| 青海省|