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參數資料
型號: APT8018JN
廠商: Advanced Power Technology Ltd.
英文描述: N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述: N溝道增強型高壓功率MOSFET
文件頁數: 1/4頁
文件大小: 60K
代理商: APT8018JN
Symbol
V
DSS
I
D
I
DM
, l
LM
V
GS
P
D
T
J
,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25
°
C
Pulsed Drain Current
1
and Inductive Current Clamped
Gate-Source Voltage
Total Power Dissipation @ T
C
= 25
°
C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS
= 0V, I
D
= 250
μ
A)
On State Drain Current
2
(V
DS
> I
D
(ON) x R
DS
(ON) Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D
[Cont.])
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125
°
C)
Gate-Source Leakage Current (V
GS
=
±
30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5.0mA)
THERMAL CHARACTERISTICS
Symbol
R
Θ
JC
R
Θ
CS
Characteristic
Junction to Case
Case to Sink
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN
TYP
MAX
0.18
0.05
UNIT
°
C/W
Symbol
BV
DSS
I
D
(ON)
R
DS
(ON)
I
DSS
I
GSS
V
GS
(TH)
UNIT
Volts
Amps
Ohms
μ
A
nA
Volts
UNIT
Volts
Amps
Volts
Watts
W/
°
C
°
C
MAXIMUM RATINGS
All Ratings: T
C
= 25
°
C unless otherwise specified.
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
SOT-227
G
S
S
D
APT8018JN
800V
40A
0.18
SINGLE DIE ISOTOP
PACKAGE
APT
8018JN
800
40
160
±
30
690
5.52
-55 to 150
300
MIN
TYP
MAX
APT8018JN
800
APT8018JN
40
APT8018JN
0.18
250
1000
±
100
2
4
ISOTOP
"UL Recognized" File No. E145592 (S)
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
0
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadéra Nord
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 55647 97 61
G
D
S
相關PDF資料
PDF描述
APT8018 ECONOLINE: REC3-S_DRW(Z)/H4,H6 - Safety standards and approval: EN 60950 certified, rated for 250VAV (LVD test report)- Applied for Ul 1950 Component Recognised Certification- 3W DIP Package- 4kVDC & 6kVDC Isolation- Regulated Output- Continuous Short Circiut Protection Auto-Restarting
APT8018L2VR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT8020B2FLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT8020B2LL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT8020LLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
相關代理商/技術參數
參數描述
APT8018JNFR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 40A I(D)
APT8018L2VFR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:800V RDS(ON)0.18Ohms ID(cont):43Amps|MOSFETs
APT8018L2VFRG 功能描述:MOSFET N-CH 800V 43A TO-264MAX RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
APT8018L2VR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT8018L2VR_06 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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