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參數資料
| 型號： | APT8024JFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 800 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數： | 3/5頁 |
| 文件大小： | 245K |
| 代理商： | APT8024JFLL |
050-7076
Rev
C
5-2006
APT8024JFLL
Typical Performance Curves
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
80
70
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5.5V
7.5V
6V
6.5V
7V
VGS =15 &10 V
8V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
0
5
10
15
20
25
30
0
2468
10
12
0
10
20
30
40
50
60
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
100
80
60
40
20
0
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
V
GS = 10V @ 15.5A
I
D = 15.5A
V
GS = 10V
0.0409
0.225
0.00361
0.0246
0.406
148.0
Dissipated Power
(Watts)
T
J (C)
T
C (C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT8024JLL | 功能描述:MOSFET N-CH 800V 29A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT8024JLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT8024LFLL | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 800V 31A 3-Pin(3+Tab) TO-264 |
| APT8024LFLLG | 功能描述:MOSFET N-CH 800V 31A TO-264 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT8024LLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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