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參數資料
| 型號： | APT8024LVFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 33 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 141K |
| 代理商： | APT8024LVFR |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Fast Switching Characteristic
RDS(ON)
4mΩ
▼ Low On-resistance
ID
20A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
℃
/W
Data and specifications subject to change without notice
200806053
1
AP4430GEM
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
30
Gate-Source Voltage
±12
Continuous Drain Current
3
20
Continuous Drain Current
3
16
Pulsed Drain Current
1
80
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Thermal Data
Parameter
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching,ruggedized device
design, ultra low on-resistance and cost-effectiveness.
S
G
D
SO-8
S
G
D
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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PDF描述 |
|---|---|
| APT8024B2VFR | 33 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8028JVR | 28 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8028JVR | 28 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT802R8KN | 4.4 A, 800 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| APT802R4KN | 4.7 A, 800 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT8024LVFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT8024LVR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:POWER MOS V 800V 33A 0.240 Ohm |
| APT8024LVRG | 功能描述:MOSFET N-CH 800V 33A TO-264 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT8028JVR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT802R4AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5A I(D) | TO-3 |
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