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參數資料
型號: APTC60AM24SCTG
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 95 A, 600 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SP4, 10 PIN
文件頁數: 1/5頁
文件大小: 234K
代理商: APTC60AM24SCTG
APTC60AM24SCTG
APT
C
60AM
24SCT
G
Rev
0
Au
gust,
2009
www.microsemi.com
1 – 7
NTC2
OUT
VBUS
NTC1
0/VBU S
Q1
G1
Q2
S1
S2
G2
NTC2
S1
OUT
NTC1
VBUS
0/VBUS
G2
S2
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
95
ID
Continuous Drain Current
Tc = 80°C
70
IDM
Pulsed Drain current
260
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
24
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
462
W
IAR
Avalanche current (repetitive and non repetitive)
15
A
EAR
Repetitive Avalanche Energy
3
EAS
Single Pulse Avalanche Energy
1900
mJ
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
Parallel SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Phase leg
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
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