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參數資料
| 型號： | APTC60DHM45T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 49 A, 600 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 251K |
| 代理商： | APTC60DHM45T1G |
APTC60DHM45T1G
APT
C
60DHM
45T1G
–
Rev
0
Au
gust,
2009
www.microsemi.com
1 – 7
Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
49
ID
Continuous Drain Current
Tc = 80°C
38
IDM
Pulsed Drain current
130
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
45
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
15
A
EAR
Repetitive Avalanche Energy
3
EAS
Single Pulse Avalanche Energy
1900
mJ
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Asymmetrical bridge
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 45mΩ max @ Tj = 25°C
ID = 49A @ Tc = 25°C
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相關代理商/技術參數 |
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| APTC60DSKM45T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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