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參數資料
| 型號： | APTC60DSKM70T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數： | 4/6頁 |
| 文件大?。?/td> | 338K |
| 代理商： | APTC60DSKM70T3 |
APTC60DSKM70T3
A
P
T
C
60
D
S
K
M
70T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
n
c
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
40
80
120
160
200
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t
(A
)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
20
40
60
80
100
120
140
01
23
45
6
7
VGS, Gate to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
en
t
(A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
0
10203040
5060
ID, Drain Current (A)
R
DS
(o
n
)
D
rai
n
t
o
S
o
u
rce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 19.5A
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
en
t
(A
)
DC Drain Current vs Case Temperature
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參數描述 |
|---|---|
| APTC60DSKM70T3G | 功能描述:MOSFET MOD DUAL BUCK CHOPPER SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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| APTC60HM45SCTG | 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:Microsemi APTC60HM45SCTG MOSFETs 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP4 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
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