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參數(shù)資料
| 型號(hào)： | APTC60DSKM70T3 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 338K |
| 代理商： | APTC60DSKM70T3 |
APTC60DSKM70T3
A
P
T
C
60
D
S
K
M
70T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
6 - 6
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
ra
in
C
u
rr
e
n
t
(A
)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
102030405060
70
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=400V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
0
10203040
50
6070
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=400V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
0
102030
4050
6070
ID, Drain Current (A)
S
w
it
c
h
in
g
E
n
e
rg
y
(
m
J)
VDS=400V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
0
5 10 15 20 25 30 35 40 45 50
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=400V
ID=39A
TJ=125°C
L=100H
hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
140
160
5
10152025
3035
ID, Drain Current (A)
Fr
e
que
nc
y(
k
H
z)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=5
TJ=125°C
TC=75°C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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