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參數(shù)資料
| 型號： | APTC60TDUM35P |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-21 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 333K |
| 代理商： | APTC60TDUM35P |
APTC60TDUM35P
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60T
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2004
APT website – http://www.advancedpower.com
1 - 6
S3/S 4
G5
D5
S5
S5/ S6
S1
D1
G1
S1/S2
S3
D3
G3
D6
S6
G6
D2
G2
S2
D4
S4
G4
G5
G6
S6
S5
G3
D 3
D 5
S3/S4
G4
S4
D 6
D 4
S3
D 1
S5/S6
S2
G2
S1
G1
D 2
S1/S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
72
ID
Continuous Drain Current
Tc = 80°C
54
IDM
Pulsed Drain current
200
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
35
m
PD
Maximum Power Dissipation
Tc = 25°C
416
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
VDSS = 600V
RDSon = 35m max @ Tj = 25°C
ID = 72A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple dual Common Source
Super Junction MOSFET
Power Module
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