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參數資料
| 型號： | APTC60VDAM24T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 95 A, 600 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 240K |
| 代理商： | APTC60VDAM24T3G |
APTC60VDAM24T3G
APT
C
60VDAM
24T
3G
–
Rev
0
Septem
ber
,2009
www.microsemi.com
1 – 7
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
95
ID
Continuous Drain Current
Tc = 80°C
70
IDM
Pulsed Drain current
260
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
24
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
462
W
IAR
Avalanche current (repetitive and non repetitive)
15
A
EAR
Repetitive Avalanche Energy
3
EAS
Single Pulse Avalanche Energy
1900
mJ
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction (PFC)
Interleaved PFC
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
Boost of twice the current capability
RoHS Compliant
Dual boost chopper
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
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相關代理商/技術參數 |
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| APTC80A15SCTG | 功能描述:MOSFET PWR MOD PHASE LEG SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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