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參數資料
| 型號： | APTC80A10SCT |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 800 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 2/7頁 |
| 文件大小： | 312K |
| 代理商： | APTC80A10SCT |
APTC80A10SCT
A
PT
C
80A
10S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 750A
800
V
VGS = 0V,VDS = 800V
Tj = 25°C
75
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
750
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 21A
100
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 3mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±175
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
6761
Coss
Output Capacitance
3137
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
161
pF
Qg
Total gate Charge
273
Qgs
Gate – Source Charge
36
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 42A
138
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 533V
ID = 42A
RG = 1.8
W
35
ns
Eon
Turn-on Switching Energy
437
Eoff
Turn-off Switching Energy
u
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 42A, RG = 1.8
417
J
Eon
Turn-on Switching Energy
765
Eoff
Turn-off Switching Energy
u
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 42A, RG = 1.8
513
J
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
30
A
IF = 30A
1.15
IF = 60A
1.05
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1
V
Tj = 25°C
24
trr
Reverse Recovery Time
IF = 30A
VR = 133V
di/dt = 200A/s
Tj = 125°C
48
ns
Tj = 25°C
33
Qrr
Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/s
Tj = 125°C
150
nC
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