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參數資料
| 型號： | APTC80A10SCT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 800 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 6/7頁 |
| 文件大?。?/td> | 312K |
| 代理商： | APTC80A10SCT |
APTC80A10SCT
A
PT
C
80A
10S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 7
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
20
30
40
50
60
70
ID, Drain Current (A)
td
(o
n
)a
n
d
td
(o
ff)
(n
s
)
VDS=533V
RG=1.8
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
20
30
40
50
60
70
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=533V
RG=1.8
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.4
0.8
1.2
1.6
20
30
40
50
60
70
ID, Drain Current (A)
E
o
n
a
n
d
E
o
ff
(m
J
)
VDS=533V
RG=1.8
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
02.557.5
10
12.5
15
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
Switching Energy vs Gate Resistance
VDS=533V
ID=42A
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
400
10
15
20
25
30
35
40
ID, Drain Current (A)
F
req
u
e
nc
y(
kH
z)
Operating Frequency vs Drain Current
VDS=533V
D=50%
RG=1.8
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2
0.6
1
1.4
1.8
VSD, Source to Drain Voltage (V)
I DR
,R
everse
Drain
Cu
rrent
(A
)
Source to Drain Diode Forward Voltage
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