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參數資料
型號: APTC80H15T3
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 28 A, 800 V, 0.15 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-25
文件頁數: 1/5頁
文件大小: 335K
代理商: APTC80H15T3
APTC80H15T3
A
P
T
C
80
H
15T
3
–R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
1 – 6
11
Q4
14
13
23
Q2
10
8
7
3
4
22
29
31
R1
15
16
32
26
19
18
Q1
Q3
27
30
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
800
V
Tc = 25°C
28
ID
Continuous Drain Current
Tc = 80°C
21
IDM
Pulsed Drain current
110
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
150
m
PD
Maximum Power Dissipation
Tc = 25°C
277
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
0.5
EAS
Single Pulse Avalanche Energy
670
mJ
VDSS = 800V
RDSon = 150m max @ Tj = 25°C
ID = 28A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
Full - Bridge
Super Junction MOSFET
Power Module
相關PDF資料
PDF描述
APTC80H29T1G 15 A, 800 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC80H29T3 15 A, 800 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC80H29T3 15 A, 800 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC90AM60SCTG 59 A, 900 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC90AM60T1G 59 A, 900 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數
參數描述
APTC80H15T3G 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APTC80H29SCT 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module
APTC80H29SCTG 功能描述:MOSFET PWR MOD FULL BRIDGE SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APTC80H29T1G 功能描述:MOSFET PWR MOD FULL BRIDGE SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APTC80H29T3 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
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