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參數資料
| 型號： | APTC80H29SCT |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module |
| 中文描述： | 全-橋系列 |
| 文件頁數： | 1/7頁 |
| 文件大小： | 327K |
| 代理商： | APTC80H29SCT |
APTC80H29SCT
A
APT website – http://www.advancedpower.com
1 – 7
OUT1 OUT2
G1
S1
CR2A
Q1
CR1A
CR3B
CR1B
G2
S2
NTC1
CR2B
Q2
CR4B
0/VBUS
CR4A
CR3A
G4
G3
S3
S4
Q4
NTC2
Q3
VBUS
OUT1
OUT2
NTC1
NTC2
G3
S3
VBUS
G1
S1
G4
G2
S2
0/VBUS
S4
Absolute maximum ratings
Symbol
V
DSS
Drain - Source Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Parameter
Max ratings
800
15
11
60
±30
290
156
24
0.5
670
Unit
V
T
c
= 25°C
T
c
= 80°C
I
D
Continuous Drain Current
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
A
V
m
W
A
T
c
= 25°C
mJ
V
DSS
= 800V
R
DSon
= 290m max @ Tj = 25°C
I
D
= 15A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
-
-
-
Parallel SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
Ultra low R
DSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Full - Bridge
Series & SiC parallel diodes
Super Junction
MOSFET Power Module
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APTC80H29SCTG | 功能描述:MOSFET PWR MOD FULL BRIDGE SP4 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTC80H29T1G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTC80H29T3 | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APTC80H29T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTC80SK15T1G | 功能描述:MOSFET N-CH 800V 28A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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