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參數資料
型號: APTC80TDU15P
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 28 A, 800 V, 0.15 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-21
文件頁數: 1/6頁
文件大小: 330K
代理商: APTC80TDU15P
APTC80TDU15P
A
P
T
C
80T
D
U
15P
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ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
1 – 6
S3/S 4
G5
D5
S5
S5/ S6
S1
D1
G1
S1/S2
S3
D3
G3
D6
S6
G6
D2
G2
S2
D4
S4
G4
G5
G6
S6
S5
G3
D 3
D 5
S3/S4
G4
S4
D 6
D 4
S3
D 1
S5/S6
S2
G2
S1
G1
D 2
S1/S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
800
V
Tc = 25°C
28
ID
Continuous Drain Current
Tc = 80°C
21
IDM
Pulsed Drain current
110
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
150
m
PD
Maximum Power Dissipation
Tc = 25°C
277
W
IAR
Avalanche current (repetitive and non repetitive)
24
A
EAR
Repetitive Avalanche Energy
0.5
EAS
Single Pulse Avalanche Energy
670
mJ
VDSS = 800V
RDSon = 150m max @ Tj = 25°C
ID = 28A @ Tc = 25°C
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Very low (12mm) profile
Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Triple dual Common Source
Super Junction MOSFET
Power Module
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PDF描述
APTC80TDU15P 28 A, 800 V, 0.15 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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