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參數資料
| 型號： | APTC90H12T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 900 V, 0.12 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 205K |
| 代理商： | APTC90H12T1G |
APTC90H12T1G
APT
C
90H12T
1G
–
Rev
0
August,
2009
www.microsemi.com
1 – 5
79
1
4
NTC
11
810
12
3
6
Q1
Q2
5
Q4
Q3
2
Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
900
V
Tc = 25°C
30
ID
Continuous Drain Current
Tc = 80°C
23
IDM
Pulsed Drain current
75
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
120
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
8.8
A
EAR
Repetitive Avalanche Energy
2.9
EAS
Single Pulse Avalanche Energy
1940
mJ
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Full - Bridge
Super Junction MOSFET
Power Module
VDSS = 900V
RDSon = 120mΩ max @ Tj = 25°C
ID = 30A @ Tc = 25°C
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