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參數(shù)資料
型號(hào): APTGF10X120E2G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 15 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-17
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 244K
代理商: APTGF10X120E2G
APTGF10X120E2
APTGF10X120P2
A
PT
G
F1
0X
12
0E
2(
P2
)–
R
ev
0
N
ov
em
be
r,
20
03
APT website – http://www.advancedpower.com
1 - 4
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
15
IC
Continuous Collector Current
TC = 80°C
10
ICM
Pulsed Collector Current
TC = 25°C
30
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
80
W
SCSOA Short Circuit Safe Operating Area
Tj = 125°C
100A@1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pin out: APTGF10X120E2 (Long pins)
V
W
P+
11 12
9 10
7 8
U
N-
1 2 3 4 5 6
Pin out: APTGF10X120P2 (Short pins)
P+
W
V
U
N-
12
10
9
11
8
2
1
4
6
7
5
3
VCES = 1200V
IC = 10A @ Tc = 80°C
Application
AC Motor control
Features
Non Punch Through (NPT) IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
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