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參數(shù)資料
| 型號(hào)： | APTGF15X120P2 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 25 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-17 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 244K |
| 代理商： | APTGF15X120P2 |
APTGF15X120E2
APTGF15X120P2
A
PT
G
F1
5X
12
0E
2(
P2
)–
R
ev
0
N
ov
em
be
r,
20
03
APT website – http://www.advancedpower.com
1 - 4
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pin out: APTGF15X120E2 (Long pins)
V
W
P+
11 12
9 10
7 8
U
N-
1 2 3 4 5 6
Pin out: APTGF15X120P2 (Short pins)
P+
W
V
U
N-
12
10
9
11
8
2
1
4
6
7
5
3
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
25
IC
Continuous Collector Current
TC = 80°C
15
ICM
Pulsed Collector Current
TC = 25°C
50
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
145
W
SCSOA Short Circuit Safe Operating Area
Tj = 125°C
150A@1200V
VCES = 1200V
IC = 15A @ Tc = 80°C
Application
AC Motor control
Features
Non Punch Through (NPT) IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
相關(guān)PDF資料 |
PDF描述 |
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| APTGF15X120E2G | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF15X120E2 | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF15X120T3G | 25 A, 1200 V, N-CHANNEL IGBT |
| APTGF15X60BTP2 | 25 A, 600 V, N-CHANNEL IGBT |
| APTGF15X60RTP2 | 25 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF15X120P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15X120T3G | 功能描述:IGBT MODULE NPT 3PH BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF15X60BTP2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF15X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF15X60RTP2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
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