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參數(shù)資料
| 型號： | APTGF200U120D |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Single Switch with Series diodes NPT IGBT Power Module |
| 中文描述： | 單系列開關(guān)二極管和IGBT功率模塊不擴散核武器條約 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 300K |
| 代理商： | APTGF200U120D |
APTGF200U120D
A
APT website – http://www.advancedpower.com
1 – 6
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
1200
275
200
600
±20
1136
600A @ 1200V
Unit
V
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
T
c
= 25°C
T
j
= 150°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
SSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Switching Safe Operating Area
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
CK
EK
G
E
C
C
CK
E
G
EK
V
CES
= 1200V
I
C
= 200A @ Tc = 80°C
Application
Features
Zero Current Switching resonant mode
Non Punch Through (NPT) FAST IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Single Switch
with Series diodes
NPT IGBT Power Module
相關(guān)PDF資料 |
PDF描述 |
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| APTGF200U60D4 | Single switch NPT IGBT Power Module |
| APTGF20X60BTP2 | Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF20X60E2 | 3 Phase bridge NPT IGBT Power Module |
| APTGF20X60P2 | 3 Phase bridge NPT IGBT Power Module |
| APTGF25DDA120T3 | Dual Boost Chopper NPT IGBT Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF200U120DG | 功能描述:IGBT 1200V 275A 1136W SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF200U120T1G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF200U60D4 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch NPT IGBT Power Module |
| APTGF20X60BTP2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF20X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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