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參數(shù)資料
| 型號： | APTGF300U120DG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 400 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP6, MODULE-5 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 239K |
| 代理商： | APTGF300U120DG |
APTGF300U120DG
A
P
T
G
F
300
U
120D
G
–
R
ev
1
J
ul
y,
2006
www.microsemi.com
1 – 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
400
IC
Continuous Collector Current
Tc = 80°C
300
ICM
Pulsed Collector Current
Tc = 25°C
600
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
1780
W
RBSOA
Reverse Bias Safe Operating Area
Tj = 150°C
600A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
CK
EK
G
EC
C
CK
E
G
EK
VCES = 1200V
IC = 300A @ Tc = 80°C
Application
Zero Current Switching resonant mode
Features
Non Punch Through (NPT) FAST IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS compliant
Single Switch
with Series diodes
NPT IGBT Power Module
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF300U60AG | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF300U60D4 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch NPT IGBT Power Module |
| APTGF300U60D4G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30A60T1G | 功能描述:IGBT MODULE NPT PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF30H60T1G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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