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參數(shù)資料
型號: APTGF30X60BTP2
廠商: Advanced Power Technology Ltd.
英文描述: Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
中文描述: 輸入整流橋橋制動三相IGBT功率模塊不擴散核武器條約
文件頁數(shù): 1/4頁
文件大小: 188K
代理商: APTGF30X60BTP2
APTGF30X60RTP2
APTGF30X60BTP2
A
APT website – http://www.advancedpower.com
1 - 4
All ratings @ T
j
= 25°C unless otherwise specified
1.
Absolute maximum ratings
Diode rectifier
Absolute maximum ratings
Symbol
V
RRM
Repetitive Peak Reverse Voltage
I
D
DC Forward Current
Parameter
Max ratings
1600
30
300
230
Unit
V
T
C
= 80°C
T
j
= 25°C
T
j
= 150°C
I
FSM
Surge Forward Current
t
p
= 10ms
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APTGF30X60RTP2: Without Brake (Pin 7 & 14 not connected)
18
19
20
10
11
16
14 13
15
17
21
12
1
2
3
4
5
6
22
23
24
7
8
9
V
CES
= 600V
I
C
= 30A @ Tc = 80°C
Application
Features
AC Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Input rectifier bridge +
Brake + 3 Phase Bridge
NPT IGBT Power Module
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF30X60BTP2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF30X60E2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF30X60E2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF30X60P2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module
APTGF30X60P2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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