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參數資料
| 型號： | APTGF30X60E2 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-17 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 238K |
| 代理商： | APTGF30X60E2 |
APTGF30X60E2
APTGF30X60P2
A
PT
G
F3
0X
60
E
2(
P2
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R
ev
0
N
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em
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20
03
APT website – http://www.advancedpower.com
2 - 4
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
600
V
Tj = 25°C
1
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1
mA
Tj = 25°C
1.95
2.45
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 30A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.7 mA
3
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Cies
Input Capacitance
1300
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
100
pF
Td(on)
Turn-on Delay Time
30
Tr
Rise Time
6.5
Td(off)
Turn-off Delay Time
75
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 6.8
12
ns
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
7
Td(off)
Turn-off Delay Time
85
Tf
Fall Time
18
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 30A
RG = 6.8
0.8
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
1.25 1.6
VF
Diode Forward Voltage
IF = 30A
VGE = 0V
Tj = 125°C
1.2
V
ER
Reverse Recovery Energy
IF = 30A
VR = 300V
di/dt =800A/s
Tj = 125°C
0.9
mJ
Tj = 25°C
2.1
Qrr
Reverse Recovery Charge
IF = 30A
VR = 300V
di/dt =800A/s Tj = 125°C
3.3
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
IGBT
0.9
RthJC
Junction to Case
Diode
1.4
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
2
3.5
N.m
Wt
Package Weight
185
g
相關PDF資料 |
PDF描述 |
|---|---|
| APTGF30X60P2 | 40 A, 600 V, N-CHANNEL IGBT |
| APTGF30X60P2 | 40 A, 600 V, N-CHANNEL IGBT |
| APTGF30X60P2G | 40 A, 600 V, N-CHANNEL IGBT |
| APTGF350A60 | 430 A, 600 V, N-CHANNEL IGBT |
| APTGF350A60 | 430 A, 600 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGF30X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF30X60P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60RTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF30X60T3G | 功能描述:IGBT MODULE NPT 2PH BRIDGE SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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