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參數資料
| 型號： | APTGF50VDA120T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 70 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 243K |
| 代理商： | APTGF50VDA120T3G |
APTGF50VDA120T3G
APTGF50VDA12
0T3G
–
Rev
0
S
eptem
ber,
2009
www.microsemi.com
1- 7
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction (PFC)
Interleaved PFC
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
-
Symmetrical design
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
Each leg can be easily paralleled to achieve a
single boost of twice the current capability
RoHS compliant
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
4
3
16
8
23
22
31
30
32
29
NTC
26
27
15
19
13
20
10
11
14
7
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
Tc = 25°C
70
IC
Continuous Collector Current
Tc = 80°C
50
ICM
Pulsed Collector Current
Tc = 25°C
150
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
312
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
100A @ 1200V
VCES = 1200V
IC = 50A @ Tc = 80°C
Dual Boost chopper
NPT IGBT Power Module
相關PDF資料 |
PDF描述 |
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| APTGT150DA120D1G | 220 A, 1200 V, N-CHANNEL IGBT |
| APTGT200DA60T | 290 A, 600 V, N-CHANNEL IGBT |
| APTGT200DA60T | 290 A, 600 V, N-CHANNEL IGBT |
| APTGT300DA120D3G | 440 A, 1200 V, N-CHANNEL IGBT |
| APTGT30X60T3G | 50 A, 600 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGF50VDA60T3G | 功能描述:POWER MOD IGBT NPT DL BOOST SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF50X120E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X120E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X120E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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