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參數資料
型號: APTGF50X120E2
廠商: Advanced Power Technology Ltd.
英文描述: 3 Phase bridge NPT IGBT Power Module
中文描述: 3相橋不擴散核武器條約IGBT功率模塊
文件頁數: 1/4頁
文件大小: 184K
代理商: APTGF50X120E2
APTGF50X120E2
APTGF50X120P2
A
APT website – http://www.advancedpower.com
1 - 4
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pin out: APTGF50X120E2
(Long pins)
V
W
P+
11 12
9 10
7 8
U
N-
1 2 3 4 5 6
Pin out: APTGF50X120P2
(Short pins)
N-
P+
W
V
U
12
10
9
11
8
2
1
4
6
7
5
3
Parameter
Max ratings
1200
72
50
140
±20
350
500A@1200V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
SCSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short Circuit Safe Operating Area
A
V
W
V
CES
= 1200V
I
C
= 50A @ Tc = 80°C
Application
Features
AC Motor control
Non Punch Through (NPT) IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
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相關代理商/技術參數
參數描述
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