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參數(shù)資料
型號: APTGF50X120E3
元件分類: IGBT 晶體管
英文描述: 78 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-33
文件頁數(shù): 1/3頁
文件大?。?/td> 209K
代理商: APTGF50X120E3
APTGF50X120E3
A
PT
G
F5
0X
12
0E
3
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
13
14
17
19
15
8
9
11
10
12
21
20
5 6
3 4
1 2
7
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
78
IC
Continuous Collector Current
TC = 80°C
50
ICM
Pulsed Collector Current
TC = 25°C
150
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
400
W
SCSOA Short Circuit Save Operating Area
Tj = 125°C
500A@1200V
VCES = 1200V
IC = 50A @ Tc = 80°C
Application
AC Motor control
Features
Non Punch Through (NPT) IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
相關PDF資料
PDF描述
APTGF50X120E3G 78 A, 1200 V, N-CHANNEL IGBT
APTGF50X120E3 78 A, 1200 V, N-CHANNEL IGBT
APTGF75DA60D1 100 A, 600 V, N-CHANNEL IGBT
APTGF75DA60D1 100 A, 600 V, N-CHANNEL IGBT
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相關代理商/技術參數(shù)
參數(shù)描述
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