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參數資料
| 型號： | APTGF50X60BTP3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 35 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 254K |
| 代理商： | APTGF50X60BTP3 |
APTGF50X60RTP3
APTGF50X60BTP3
A
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APT website – http://www.advancedpower.com
1 - 4
All ratings @ Tj = 25°C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VRRM
Repetitive Peak Reverse Voltage
1600
V
ID
DC Forward Current
TC = 80°C
80
Tj = 25°C
500
IFSM
Surge Forward Current
tp = 10ms
Tj = 150°C
400
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APTGF50X60RTP3: Without Brake (Pin 7 & 14 not connected)
9
8
7
4
5
6
22
23
24
1
2
3
17
18
19
20
10
11
12
14 13
16 15
21
VCES = 600V
IC = 50A @ Tc = 80°C
Application
AC Motor control
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
Low conduction losses
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
Input rectifier bridge +
Brake + 3 Phase Bridge
NPT IGBT Power Module
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGF50X60BTP3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X60E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X60P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X60P2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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