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參數資料
| 型號： | APTGF90DH60T |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-14 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 299K |
| 代理商： | APTGF90DH60T |
APTGF90DH60T
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2004
APT website – http://www.advancedpower.com
1- 6
Application
Welding converters
Switched Mode Power Supplies
Switched Reluctance Motor Drives
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive TC of VCEsat
Low profile
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
VBUS
Q4
OUT2
OUT1
VBUS SENSE
CR3
0/VBU S
G4
E4
NTC2
Q1
CR2
0/VBU S SENSE
NTC1
G1
E1
NTC2
OUT1
OUT2
VBUS
SENSE
E1
NTC1
E4
G4
0/VBUS
SENSE
G1
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
Tc = 25°C
110
IC
Continuous Collector Current
Tc = 80°C
90
ICM
Pulsed Collector Current
Tc = 25°C
315
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
Tc = 25°C
312
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
315A @ 600V
VCES = 600V
IC = 90A @ Tc = 80°C
Asymmetrical - Bridge
NPT IGBT Power Module
相關PDF資料 |
PDF描述 |
|---|---|
| APTGF90DH60T | 110 A, 600 V, N-CHANNEL IGBT |
| APTGF90DU60T | 110 A, 600 V, N-CHANNEL IGBT |
| APTGF90DU60T | 110 A, 600 V, N-CHANNEL IGBT |
| APTGF90H60T3G | 120 A, 600 V, N-CHANNEL IGBT |
| APTGF90SK60T1G | 110 A, 600 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGF90DH60T3G | 功能描述:IGBT NPT BRIDGE 600V 110A SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF90DH60TG | 功能描述:IGBT MODULE NPT ASYM BRIDGE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF90DSK60T3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Dual Buck chopper NPT IGBT Power Module |
| APTGF90DU60T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source NPT IGBT Power Module |
| APTGF90DU60TG | 功能描述:IGBT MODULE NPT DUAL SOURCE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
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