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參數(shù)資料
型號: APTGS50X170E3
廠商: Advanced Power Technology Ltd.
英文描述: 3 Phase bridge NPT IGBT Power Module
中文描述: 3相橋不擴散核武器條約IGBT功率模塊
文件頁數(shù): 1/3頁
文件大小: 179K
代理商: APTGS50X170E3
APTGS50X170E3
A
APT website – http://www.advancedpower.com
1 - 3
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
13
14
17
19
15
8
9
11
10
12
21
20
5 6
3 4
1 2
7
Parameter
Max ratings
1700
100
50
150
±20
480
100A@1600V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA Reverse Bias Operating Area
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
A
V
W
V
CES
= 1700V
I
C
= 50A @ Tc = 80°C
Application
Features
AC Motor control
Non Punch Through (NPT) Low Loss IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Benefits
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
3 Phase bridge
NPT IGBT Power Module
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