- 您現在的位置：買賣IC網 > PDF目錄36733 > APTGT100DU120T 140 A, 1200 V, N-CHANNEL IGBT PDF資料下載
參數資料
| 型號： | APTGT100DU120T |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 140 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-12 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 278K |
| 代理商： | APTGT100DU120T |
APTM10SKM05T
A
P
T
M
10S
K
M
05T
–R
ev
0
M
ay,
2005
APT website – http://www.advancedpower.com
2 - 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 100V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 80V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 125A
4.5
5
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
2
4
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
20
Coss
Output Capacitance
8
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
2.9
nF
Qg
Total gate Charge
700
Qgs
Gate – Source Charge
120
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID = 250A
360
nC
Td(on)
Turn-on Delay Time
80
Tr
Rise Time
165
Td(off)
Turn-off Delay Time
280
Tf
Fall Time
Resistive Switching
VGS = 15V
VBus = 66V
ID = 250A
RG = 2.5
135
ns
Eon
Turn-on Switching Energy
1.1
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 250A, RG =2.5
1.2
mJ
Eon
Turn-on Switching Energy
1.22
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 250A, RG = 2.5
1.28
mJ
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
350
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
600
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
200
A
IF = 200A
1
IF = 400A
1.4
VF
Diode Forward Voltage
IF = 200A
Tj = 125°C
0.9
V
Tj = 25°C
60
trr
Reverse Recovery Time
Tj = 125°C
110
ns
Tj = 25°C
400
Qrr
Reverse Recovery Charge
IF = 200A
VR = 133V
di/dt =400A/s
Tj = 125°C
1680
nC
相關PDF資料 |
PDF描述 |
|---|---|
| APTGT100DU170T | 150 A, 1700 V, N-CHANNEL IGBT |
| APTGT100DU170T | 150 A, 1700 V, N-CHANNEL IGBT |
| APTGT100H60T3 | 75 A, 600 V, N-CHANNEL IGBT |
| APTGT100H60T3 | 75 A, 600 V, N-CHANNEL IGBT |
| APTGT100SK120D1 | 150 A, 1200 V, N-CHANNEL IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APTGT100DU120TG | 功能描述:IGBT MOD TRENCH DUAL SOURCE SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT100DU170T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source Trench + Field Stop IGBT Power Module |
| APTGT100DU170TG | 功能描述:IGBT DUAL SOURCE 1700V 150A SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT100DU60T | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Dual common source Trench + Field Stop IGBT Power Module |
| APTGT100DU60TG | 功能描述:POWER MOD IGBT TRENCH DL SRC SP4 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
發布緊急采購，3分鐘左右您將得到回復。