- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51272 > APTGT150A60T3AG (MICROSEMI POWER PRODUCTS GROUP) 225 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APTGT150A60T3AG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 225 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 197K |
| 代理商： | APTGT150A60T3AG |
APTGT150A60T3AG
APT
G
T
150A60T
3AG
–
Rev
0
M
ay,
2009
www.microsemi.com
1 – 5
29
13
30 31
32
R1
23
22
28
25
27
26
7
8
3
4
18
16
20
19
14
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
225
IC
Continuous Collector Current
TC = 100°C
150
ICM
Pulsed Collector Current
TC = 25°C
300
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
600
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
300A @ 550V
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
Kelvin emitter for easy drive
Internal thermistor for temperature monitoring
High level of integration
AlN substrate for improved thermal performance
Benefits
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Phase leg
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 150A @ Tc = 100°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGT150DA170D1 | 280 A, 1700 V, N-CHANNEL IGBT |
| APTGT150DA170D1G | 280 A, 1700 V, N-CHANNEL IGBT |
| APTGT150DA170D1 | 280 A, 1700 V, N-CHANNEL IGBT |
| APTGT150DA60T3AG | 225 A, 600 V, N-CHANNEL IGBT |
| APTGT150DA60T | 225 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT150A60TG | 功能描述:IGBT MODULE TRENCH PHASE LEG SP4 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT150DA120D1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost chopper Trench IGBT Power Module |
| APTGT150DA120D1G | 功能描述:IGBT 1200V 220A 700W D1 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT150DA120D3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Boost Chopper Trench IGBT Power Module |
| APTGT150DA120DX | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。