- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51273 > APTGT150TL60G (MICROSEMI POWER PRODUCTS GROUP) 200 A, 600 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APTGT150TL60G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP6, 12 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 220K |
| 代理商： | APTGT150TL60G |
APTGT150TL60G
APT
G
T
150T
L
60G
–
Rev0
M
ar
ch,
2
009
www.microsemi.com
1- 7
Q1 to Q4 Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
0/VBUS
OUT
CR6
CR5
NEUTRAL
VBUS
E3
E4
G3
G1
G2
E2
Q4
Q3
G4
E1
Q1
Q2
G3
E3
G4
VBUS
G1
G2
E2
OUT
NEUTRAL
0/VBUS
E1
E4
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
200
IC
Continuous Collector Current
TC = 80°C
150
ICM
Pulsed Collector Current
TC = 25°C
300
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
480
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
300A @ 550V
VCES = 600V
IC = 150A @ Tc = 80°C
Application
Solar converter
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Three level inverter
Trench + Field Stop IGBT
Power Module
CR1
CR2
CR3
CR4
相關PDF資料 |
PDF描述 |
|---|---|
| APTGT150X120E3G | 220 A, 1200 V, N-CHANNEL IGBT |
| APTGT150X120TE3 | 220 A, 1200 V, N-CHANNEL IGBT |
| APTGT200A120 | 280 A, 1200 V, N-CHANNEL IGBT |
| APTGT200A120 | 280 A, 1200 V, N-CHANNEL IGBT |
| APTGT200A170D3 | 400 A, 1700 V, N-CHANNEL IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT150X120E3G | 制造商:Microsemi Corporation 功能描述:3 PHASE BRIDGE TRENCH + FIELD STOP IGBT POWER MODULE 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGT200A120 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Fast Trench + Field Stop IGBT Power Module |
| APTGT200A120D3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Phase leg Trench IGBT Power Module |
| APTGT200A120D3G | 功能描述:IGBT MODULE TRENCH PHASE LEG D3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGT200A120G | 功能描述:POWER MODULE IGBT 1200V 200A SP6 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
發(fā)布緊急采購，3分鐘左右您將得到回復。