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參數(shù)資料
| 型號： | APTGT200TL60G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 300 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP6, 12 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 220K |
| 代理商： | APTGT200TL60G |
APTGT200TL60G
APT
G
T
200T
L
60G
–
Rev0
M
ar
ch,
2009
www.microsemi.com
1- 7
Q1 to Q4 Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
0/VBUS
OUT
CR6
CR5
NEUTRAL
VBUS
E3
E4
G3
G1
G2
E2
Q4
Q3
G4
E1
Q1
Q2
G3
E3
G4
VBUS
G1
G2
E2
OUT
NEUTRAL
0/VBUS
E1
E4
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
300
IC
Continuous Collector Current
TC = 80°C
200
ICM
Pulsed Collector Current
TC = 25°C
400
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
652
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C
400A @ 550V
VCES = 600V
IC = 200A @ Tc = 80°C
Application
Solar converter
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Three level inverter
Trench + Field Stop IGBT
Power Module
CR1
CR2
CR3
CR4
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