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參數(shù)資料
| 型號(hào)： | APTGT20H60T1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 32 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 274K |
| 代理商： | APTGT20H60T1G |
APTGT20H60T1G
APTGT20H
60
T
1G
–
Re
v0
Augus
t,2007
www.microsemi.com
1 – 5
Q3
Q4
1
2
9
Q2
Q1
6
4
11
8
10
12
CR2
CR1
3
7
5
NTC
CR4
CR3
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
32
IC
Continuous Collector Current
TC = 80°C
20
ICM
Pulsed Collector Current
TC = 25°C
40
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
62
W
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C
40A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Full bridge
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 20A @ Tc = 80°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGT20H60T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge Trench + Field Stop IGBT Power Module |
| APTGT20H60T3G | 功能描述:IGBT MOD TRENCH FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGT20TL601G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk |
| APTGT20TL60T3G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Three level inverter Trench + Field Stop IGBT Power Module |
| APTGT20X60T3G | 功能描述:IGBT MODULE TRENCH 3PH BRDG SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
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