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參數(shù)資料
型號(hào): APTGT35A120T1G
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: IGBT 晶體管
英文描述: 55 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, SP1, 12 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 279K
代理商: APTGT35A120T1G
APTGT35A120T1G
APTGT35A
120T1
G
Re
v0
Augus
t,2007
www.microsemi.com
1 – 5
9
Q2
Q1
10
12
2
1
7
8
11
3
4
CR1
CR2
56
NTC
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
55
IC
Continuous Collector Current
TC = 80°C
35
ICM
Pulsed Collector Current
TC = 25°C
70
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
208
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
70A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Fast Trench + Field Stop IGBT Technology
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 20 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Phase leg
Fast Trench + Field Stop IGBT
Power Module
VCES = 1200V
IC = 35A @ Tc = 80°C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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